N-channel transistor IRFPG50, 3.9A, 6.1A, 500uA, 2 Ohms, TO-247, TO-247AC, 1000V. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. On-resistance Rds On: 2 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 1000V. Assembly/installation: PCB through-hole mounting. C(in): 2800pF. Channel type: N. Cost): 250pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/emitter voltage VGE(th) min.: 2V. IDss (min): 100uA. Id(imp): 24A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:37