N-channel transistor STP55NE06, 39A, 55A, 10uA, 0.019 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 3050pF. Channel type: N. Cost): 380pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 220A. Marking on the case: P55NE06. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Quantity per case: 1. RoHS: yes. Td(on): 30 ns. Technology: power MOSFET transistor. Temperature: +175°C. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29