N-channel transistor STP55NF06, 60V, 35A, TO-220, 50A, 10uA, 0.015 Ohms, TO-220, 60V

N-channel transistor STP55NF06, 60V, 35A, TO-220, 50A, 10uA, 0.015 Ohms, TO-220, 60V

Quantity
Unit price
1-4
1.17$
5-24
0.97$
25-49
0.85$
50-99
0.77$
100+
0.66$
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N-channel transistor STP55NF06, 60V, 35A, TO-220, 50A, 10uA, 0.015 Ohms, TO-220, 60V. Vdss (Drain to Source Voltage): 60V. ID (T=100°C): 35A. Housing: TO-220. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.015 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 300pF. Drain-source protection: yes. Drive Voltage: 10V. Features: -. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs max: -20V. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id @ Tc=25°C (Continuous Drain Current): 50A. Id(imp): 200A. Information: -. MSL: -. Marking on the case: P55NF06. Mounting Type: THT. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 110W. Polarity: MOSFET N. Quantity per case: 1. RoHS: yes. Series: -. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP55NF06
37 parameters
Vdss (Drain to Source Voltage)
60V
ID (T=100°C)
35A
Housing
TO-220
ID (T=25°C)
50A
Idss (max)
10uA
On-resistance Rds On
0.015 Ohms
Housing (according to data sheet)
TO-220
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
1300pF
Channel type
N
Cost)
300pF
Drain-source protection
yes
Drive Voltage
10V
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs max
-20V
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id @ Tc=25°C (Continuous Drain Current)
50A
Id(imp)
200A
Marking on the case
P55NF06
Mounting Type
THT
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
110W
Polarity
MOSFET N
Quantity per case
1
RoHS
yes
Td(off)
36ns
Td(on)
20 ns
Technology
STripFET II POWER MOSFET
Trr Diode (Min.)
75 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Stmicroelectronics