N-channel transistor STP4NB80FP, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V

N-channel transistor STP4NB80FP, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V

Quantity
Unit price
1-4
1.78$
5-49
1.47$
50-99
1.31$
100+
1.15$
Equivalence available
Quantity in stock: 77

N-channel transistor STP4NB80FP, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 700pF. Channel type: N. Cost): 95pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Temperature: +150°C. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP4NB80FP
28 parameters
ID (T=100°C)
2.4A
ID (T=25°C)
4A
Idss (max)
50uA
On-resistance Rds On
3 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
700pF
Channel type
N
Cost)
95pF
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
16A
Number of terminals
3
Pd (Power Dissipation, Max)
35W
Quantity per case
1
Td(off)
12 ns
Td(on)
14 ns
Technology
PowerMESH MOSFET
Temperature
+150°C
Trr Diode (Min.)
600 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics

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