N-channel transistor 2SK2645, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V

N-channel transistor 2SK2645, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V

Quantity
Unit price
1-4
3.54$
5-9
3.05$
10-24
2.73$
25-49
2.48$
50+
2.12$
Equivalence available
Quantity in stock: 20

N-channel transistor 2SK2645, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): 100nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Cost): 150pF. Drain-source protection: yes. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10nA. Id(imp): 32A. Marking on the case: K2645. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Temperature: +150°C. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2645
31 parameters
ID (T=25°C)
9A
Idss (max)
100nA
On-resistance Rds On
1.2 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F15
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
900pF
Channel type
N
Cost)
150pF
Drain-source protection
yes
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10nA
Id(imp)
32A
Marking on the case
K2645
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Td(off)
60 ns
Td(on)
25 ns
Technology
FAP-IIS Series MOS-FET
Temperature
+150°C
Trr Diode (Min.)
550 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3.5V
Original product from manufacturer
Fuji Electric

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