N-channel transistor STP3NB80, 1.6A, 2.6A, 50uA, 4.6 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 1.6A. ID (T=25°C): 2.6A. Idss (max): 50uA. On-resistance Rds On: 4.6 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 440pF. Channel type: N. Cost): 60pF. Drain-source protection: yes. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 10.4A. Pd (Power Dissipation, Max): 90W. Quantity per case: 1. Td(off): 15 ns. Td(on): 15 ns. Technology: PowerMESH™ MOSFET. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29