N-channel transistor STP3NK80Z, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. On-resistance Rds On: 3.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 485pF. Channel type: N. Cost): 57pF. Drain-source protection: yes. Function: very high dv/dt ratio, for switching applications. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 10A. Marking on the case: P3NK80Z. Pd (Power Dissipation, Max): 70W. Quantity per case: 1. Td(off): 36ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29