N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - STN4NF20L

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Quantity	excl. VAT	VAT incl.
1 - 4	0.91$	0.91$
5 - 9	0.87$	0.87$
10 - 24	0.82$	0.82$
25 - 49	0.78$	0.78$
50 - 99	0.76$	0.76$
100 - 145	0.68$	0.68$

Quantity	U.P
1 - 4	0.91$	0.91$
5 - 9	0.87$	0.87$
10 - 24	0.82$	0.82$
25 - 49	0.78$	0.78$
50 - 99	0.76$	0.76$
100 - 145	0.68$	0.68$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 145

Set of 1

N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - STN4NF20L. N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 630mA. ID (T=25°C): 1A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 150pF. Cost): 30pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 4A. IDss (min): 1uA. Marking on the case: 4NF20L. Pd (Power Dissipation, Max): 3.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10.4 ns. Td(on): 2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 02:25.

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