Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.55$ | 6.55$ |
2 - 2 | 6.23$ | 6.23$ |
3 - 4 | 6.03$ | 6.03$ |
5 - 9 | 5.90$ | 5.90$ |
10 - 19 | 5.77$ | 5.77$ |
20 - 29 | 5.57$ | 5.57$ |
30 - 33 | 5.37$ | 5.37$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.55$ | 6.55$ |
2 - 2 | 6.23$ | 6.23$ |
3 - 4 | 6.03$ | 6.03$ |
5 - 9 | 5.90$ | 5.90$ |
10 - 19 | 5.77$ | 5.77$ |
20 - 29 | 5.57$ | 5.57$ |
30 - 33 | 5.37$ | 5.37$ |
N-channel transistor, 30A, TO-247, TO-247AC, 1200V - STGW30NC120HD. N-channel transistor, 30A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 2510pF. Cost): 175pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 35 ns. Function: high current capability, High input impedance. Germanium diode: no. Production date: 201509. Collector current: 60A. Ic(pulse): 135A. Marking on the case: GW30NC120HD. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 275 ns. Td(on): 29 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.75V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 07/06/2025, 18:25.
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