N-channel transistor STF18NM60N, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1000pF. Channel type: N. Cost): 60pF. Drain-source protection: yes. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 52A. Marking on the case: 18NM60. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54