N-channel transistor STP20NM60FP, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V

N-channel transistor STP20NM60FP, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V

Quantity
Unit price
1-4
6.46$
5-24
5.83$
25-49
5.40$
50-99
5.08$
100+
4.60$
Quantity in stock: 21

N-channel transistor STP20NM60FP, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.025 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. Channel type: N. Cost): 350pF. Drain-source protection: yes. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 80A. Marking on the case: P20NM60FP. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh™ MOSFET. Temperature: +150°C. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP20NM60FP
31 parameters
ID (T=100°C)
12.6A
ID (T=25°C)
20A
Idss (max)
10uA
On-resistance Rds On
0.025 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1500pF
Channel type
N
Cost)
350pF
Drain-source protection
yes
Function
HIGH dv/dt, Low Gate Capacitance
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
80A
Marking on the case
P20NM60FP
Number of terminals
3
Pd (Power Dissipation, Max)
45W
Quantity per case
1
RoHS
yes
Td(off)
6 ns
Td(on)
25 ns
Technology
MDmesh™ MOSFET
Temperature
+150°C
Trr Diode (Min.)
390 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics