N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 800V - STD3NK80ZT4

Quantity	excl. VAT	VAT incl.
1 - 4	1.53$	1.53$
5 - 9	1.45$	1.45$
10 - 24	1.38$	1.38$
25 - 49	1.30$	1.30$
50 - 99	1.27$	1.27$
100 - 249	1.24$	1.24$
250 - 415	1.18$	1.18$

Quantity	U.P
1 - 4	1.53$	1.53$
5 - 9	1.45$	1.45$
10 - 24	1.38$	1.38$
25 - 49	1.30$	1.30$
50 - 99	1.27$	1.27$
100 - 249	1.24$	1.24$
250 - 415	1.18$	1.18$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 415

Set of 1

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 800V - STD3NK80ZT4. N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: roll. Drain-source protection : Zener diode. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 10A. IDss (min): 1uA. Marking on the case: D3NK80Z. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2000. G-S Protection: yes. Quantity in stock updated on 19/04/2025, 15:25.

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