N-channel transistor, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V - STD10NF10

Quantity	excl. VAT	VAT incl.
1 - 4	1.12$	1.12$
5 - 9	1.07$	1.07$
10 - 24	1.01$	1.01$
25 - 49	0.96$	0.96$
50 - 99	0.93$	0.93$
100 - 109	0.84$	0.84$

Quantity	U.P
1 - 4	1.12$	1.12$
5 - 9	1.07$	1.07$
10 - 24	1.01$	1.01$
25 - 49	0.96$	0.96$
50 - 99	0.93$	0.93$
100 - 109	0.84$	0.84$

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Quantity in stock : 109

Set of 1

N-channel transistor, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V - STD10NF10. N-channel transistor, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 100V. C(in): 470pF. Cost): 70pF. Channel type: N. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 52A. IDss (min): 1uA. Marking on the case: D10NF10. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 16 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 15:25.

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