N-channel transistor STB12NM50N, 6.8A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V. ID (T=100°C): 6.8A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.29 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. Assembly/installation: surface-mounted component (SMD). C(in): 940pF. Channel type: N. Cost): 100pF. Drain-source protection: yes. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 44A. Marking on the case: B12NM50N. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. RoHS: yes. Td(off): 60 ns. Td(on): 15 ns. Technology: MDmesh Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54