N-channel transistor STB12NM50ND, 6.9A, 11A, 100uA, 0.29 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 550V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.29 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. Assembly/installation: surface-mounted component (SMD). C(in): 850pF. Channel type: N. Cost): 48pF. Drain-source protection: yes. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 44A. Marking on the case: B12NM50ND. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. RoHS: yes. Spec info: FDmesh™ II Power MOSFET (with fast diode). Td(off): 40 ns. Td(on): 12 ns. Technology: FDmesh™ II Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 122 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54