N-channel transistor SPW17N80C3, 800V, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. Drain-source voltage (Vds): 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2320pF. Channel type: N. Cost): 1250pF. Drain-source protection: yes. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: yes. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 51A. Marking on the case: 17N80C3. Max drain current: 17A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. Power: 208W. Quantity per case: 1. RoHS: yes. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33