N-channel transistor SPP17N80C3, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V

N-channel transistor SPP17N80C3, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V

Quantity
Unit price
1-4
8.24$
5-9
7.84$
10-24
7.39$
25-49
7.02$
50+
6.48$
Equivalence available
Quantity in stock: 37

N-channel transistor SPP17N80C3, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2320pF. Channel type: N. Cost): 1250pF. Drain-source protection: zener diode. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 51A. Marking on the case: 17N80C3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. Quantity per case: 1. RoHS: yes. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33

Technical documentation (PDF)
SPP17N80C3
30 parameters
ID (T=100°C)
11A
ID (T=25°C)
17A
Idss (max)
250uA
On-resistance Rds On
0.25 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
2320pF
Channel type
N
Cost)
1250pF
Drain-source protection
zener diode
Function
'Extreme dv/dt rated Ultra low gate charge'
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.5uA
Id(imp)
51A
Marking on the case
17N80C3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
208W
Quantity per case
1
RoHS
yes
Td(off)
77 ns
Td(on)
45 ns
Technology
Cool Mos
Trr Diode (Min.)
550 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Infineon Technologies

Equivalent products and/or accessories for SPP17N80C3