N-channel transistor SPP20N60S5, TO-220, 600V, 13A, 20A, 250uA, 0.16 Ohms, TO-220, 650V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 600V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 3000pF. Channel type: N. Ciss Gate Capacitance [pF]: 3000pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 1170pF. Drain current Id (A) @ 25°C: 20A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 13A. Drain-source protection: zener diode. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Gate breakdown voltage Ugs [V]: 5.5V. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 40A. Manufacturer's marking: 20N60S5. Marking on the case: 20N60S5. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 208W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 210 ns. Switch-on time ton [nsec.]: 120ns. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Vgs(th) min.: 4.5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33