N-channel transistor SPP20N60C3, TO-220, 13.1A, 20.7A, 100uA, 0.16 Ohms, P-TO220-3-1, 650V. Housing: TO-220. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 2400pF. Channel type: N. Conditioning: tubus. Cost): 780pF. Drain current: 20.7A. Drain-source protection: yes. Drain-source voltage: 600V. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 62.1A. Marking on the case: 20N60C3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. Polarity: unipolar. Power: 208W. Quantity per case: 1. RoHS: yes. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33