| Quantity in stock: 37 |
N-channel transistor SPP17N80C2, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V
Quantity
Unit price
1-4
4.96$
5-9
4.39$
10-24
3.68$
25+
3.30$
| Equivalence available | |
| Quantity in stock: 116 |
N-channel transistor SPP17N80C2, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. Channel type: N. Function: 'Extreme dv/dt rated Ultra low gate charge'. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 51A. Marking on the case: SPP17N80C2. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. Quantity per case: 1. Technology: Cool Mos. Type of transistor: MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33
SPP17N80C2
21 parameters
ID (T=100°C)
11A
ID (T=25°C)
17A
Idss (max)
250uA
On-resistance Rds On
0.25 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
Channel type
N
Function
'Extreme dv/dt rated Ultra low gate charge'
Gate/source voltage Vgs
20V
IDss (min)
0.5uA
Id(imp)
51A
Marking on the case
SPP17N80C2
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
208W
Quantity per case
1
Technology
Cool Mos
Type of transistor
MOSFET
Original product from manufacturer
Infineon Technologies