N-channel transistor SPP11N60S5, 7A, 11A, 250uA, 0.34 Ohms, TO-220, TO-220-3-1, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1460pF. Channel type: N. Cost): 610pF. Drain-source protection: zener diode. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 22A. Marking on the case: 11N60S5. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 150 ns. Td(on): 130 ns. Technology: Cool Mos POWER transistor. Trr Diode (Min.): 650ms. Type of transistor: MOSFET. Vgs(th) min.: 3.5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33