N-channel transistor STP11NM80, 4.7A, 11A, 100uA, 0.35 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1630pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 750pF. Drain-source protection: zener diode. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 44A. Marking on the case: P11NM80. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 46 ns. Td(on): 22 ns. Technology: MDmesh MOSFET. Trr Diode (Min.): 612 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29