N-channel transistor SPD08N50C3, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V. ID (T=100°C): 4.6A. ID (T=25°C): 7.6A. Idss (max): 100uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 560V. Assembly/installation: surface-mounted component (SMD). C(in): 750pF. Channel type: N. Cost): 350pF. Drain-source protection: yes. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 22.8A. Marking on the case: 08N50C3. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 83W. Quantity per case: 1. RoHS: yes. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool Mos POWER transistor. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33