N-channel transistor STD10NM60N, 5A, 10A, 100uA, 0.53 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 650V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.53 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 650V. Assembly/installation: surface-mounted component (SMD). C(in): 540pF. Channel type: N. Cost): 44pF. Drain-source protection: yes. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 32A. Marking on the case: 10NM60N. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 70W. Quantity per case: 1. RoHS: yes. Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54