N-channel transistor SPB80N04S2-H4, 80A, 1uA, 3.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=25°C): 80A. Idss (max): 1uA. On-resistance Rds On: 3.4M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 4480pF. Channel type: N. Cost): 1580pF. Drain-source protection: zener diode. Function: 'Enhancement mode'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.01uA. Id(imp): 320A. Marking on the case: 2N04H4. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 46 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Trr Diode (Min.): 195 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33