N-channel transistor STB120N4F6, 80A, 80A, 10uA, 3.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 3.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 3850pF. Channel type: N. Cost): 650pF. Drain-source protection: zener diode. Function: Switching applications, Automotive. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 320A. Marking on the case: 120N4F6. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54