Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 21.87$ | 21.87$ |
2 - 2 | 20.78$ | 20.78$ |
3 - 4 | 20.34$ | 20.34$ |
5 - 9 | 19.69$ | 19.69$ |
10 - 14 | 19.25$ | 19.25$ |
15 - 19 | 18.59$ | 18.59$ |
20+ | 17.94$ | 17.94$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 21.87$ | 21.87$ |
2 - 2 | 20.78$ | 20.78$ |
3 - 4 | 20.34$ | 20.34$ |
5 - 9 | 19.69$ | 19.69$ |
10 - 14 | 19.25$ | 19.25$ |
15 - 19 | 18.59$ | 18.59$ |
20+ | 17.94$ | 17.94$ |
N-channel transistor, 20A, TO-247, TO-247 ( AC ), 1200V - SKW25N120. N-channel transistor, 20A, TO-247, TO-247 ( AC ), 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 1200V. C(in): 1150pF. Cost): 120pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 280 ns. Function: Fast IGBT in NPT-technology with soft, fast recovery. Collector current: 46A. Ic(pulse): 84A. Marking on the case: K25N120. Number of terminals: 3. Pd (Power Dissipation, Max): 313W. RoHS: yes. Spec info: Td(on) 50ns / Td(off) 820ns. Assembly/installation: PCB through-hole mounting. Td(off): 730 ns. Td(on): 45 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 00:25.
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