Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.24$ | 2.24$ |
5 - 9 | 2.13$ | 2.13$ |
10 - 24 | 2.02$ | 2.02$ |
25 - 49 | 1.91$ | 1.91$ |
50 - 89 | 1.86$ | 1.86$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.24$ | 2.24$ |
5 - 9 | 2.13$ | 2.13$ |
10 - 24 | 2.02$ | 2.02$ |
25 - 49 | 1.91$ | 1.91$ |
50 - 89 | 1.86$ | 1.86$ |
N-channel transistor, 12A, 15A, 10uA, 0.0075 Ohms, PowerPAK SO-8, PowerPAK SO8 ( 6.15x5.15x1.07mm ), 30 v - SIR474DP. N-channel transistor, 12A, 15A, 10uA, 0.0075 Ohms, PowerPAK SO-8, PowerPAK SO8 ( 6.15x5.15x1.07mm ), 30 v. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.0075 Ohms. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerPAK SO8 ( 6.15x5.15x1.07mm ). Voltage Vds(max): 30 v. C(in): 985pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 14 ns. Type of transistor: MOSFET. Function: 'High-Side Switch'. Id(imp): 50A. IDss (min): 1uA. Marking on the case: 196k Ohms. Number of terminals: 8. Pd (Power Dissipation, Max): 29.8W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 14 ns. Technology: TrenchFET ® Power MOSFET, (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 19/04/2025, 18:25.
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