N-channel transistor, 9.9A, 12.4A, 5uA, 0.0074 Ohms, SO, SO-8, 40V - SI4840BDY

Quantity	excl. VAT	VAT incl.
1 - 4	1.37$	1.37$
5 - 9	1.30$	1.30$
10 - 24	1.23$	1.23$
25 - 49	1.16$	1.16$
50 - 99	1.14$	1.14$
100 - 249	1.11$	1.11$
250 - 317	1.05$	1.05$

Quantity	U.P
1 - 4	1.37$	1.37$
5 - 9	1.30$	1.30$
10 - 24	1.23$	1.23$
25 - 49	1.16$	1.16$
50 - 99	1.14$	1.14$
100 - 249	1.11$	1.11$
250 - 317	1.05$	1.05$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 317

Set of 1

N-channel transistor, 9.9A, 12.4A, 5uA, 0.0074 Ohms, SO, SO-8, 40V - SI4840BDY. N-channel transistor, 9.9A, 12.4A, 5uA, 0.0074 Ohms, SO, SO-8, 40V. ID (T=100°C): 9.9A. ID (T=25°C): 12.4A. Idss (max): 5uA. On-resistance Rds On: 0.0074 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. C(in): 2000pF. Cost): 260pF. Channel type: N. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 25 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : no. G-S Protection: yes. Quantity in stock updated on 19/04/2025, 18:25.

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