N-channel transistor SI4800BDY-T1-E3, 5A, 6.5A, 5uA, 0.0155 Ohms, SO, SO-8, 30 v. ID (T=100°C): 5A. ID (T=25°C): 6.5A. Idss (max): 5uA. On-resistance Rds On: 0.0155 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: N. Drain-source protection: yes. Function: Fast Switching, Power MOSFET. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 40Ap. Marking on the case: 4800B. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. Td(off): 32 ns. Td(on): 7 ns. Technology: TrenchFET ® Power MOSFET Reduced Qg. Type of transistor: MOSFET. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.8V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14