N-channel transistor FDS8884, SO, 30A, 8.5A, 250uA, 19m Ohms, SO-8, 30 v

N-channel transistor FDS8884, SO, 30A, 8.5A, 250uA, 19m Ohms, SO-8, 30 v

Quantity
Unit price
1-4
0.60$
5-49
0.48$
50-99
0.40$
100+
0.36$
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Quantity in stock: 2192

N-channel transistor FDS8884, SO, 30A, 8.5A, 250uA, 19m Ohms, SO-8, 30 v. Housing: SO. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. On-resistance Rds On: 19m Ohms. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 475pF. Channel type: N. Charge: 13nC. Cost): 100pF. Drain current: 8.5A. Drain-source protection: yes. Drain-source voltage: 30V. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 40A. Number of outputs: 1. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1uA. Polarity: unipolar. Power: 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 42 ns. Td(on): 5 ns. Technology: MOSFET, PowerTrench®. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FDS8884
36 parameters
Housing
SO
ID (T=100°C)
30A
ID (T=25°C)
8.5A
Idss (max)
250uA
On-resistance Rds On
19m Ohms
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
475pF
Channel type
N
Charge
13nC
Cost)
100pF
Drain current
8.5A
Drain-source protection
yes
Drain-source voltage
30V
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
40A
Number of outputs
1
Number of terminals
8
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1uA
Polarity
unipolar
Power
2.5W
Quantity per case
1
RoHS
yes
Td(off)
42 ns
Td(on)
5 ns
Technology
MOSFET, PowerTrench®
Trr Diode (Min.)
33 ns
Type of transistor
MOSFET
Vgs(th) max.
2.5V
Vgs(th) min.
1.2V
Original product from manufacturer
Fairchild