N-channel transistor, 26A, 32A, 10uA, 17m Ohms, SO, SO-8, 12V - SI4448DY-T1-E3

Quantity	excl. VAT	VAT incl.
1 - 4	1.05$	1.05$
5 - 9	1.00$	1.00$
10 - 24	0.94$	0.94$
25 - 49	0.89$	0.89$
50 - 99	0.87$	0.87$
100 - 100	0.85$	0.85$

Quantity	U.P
1 - 4	1.05$	1.05$
5 - 9	1.00$	1.00$
10 - 24	0.94$	0.94$
25 - 49	0.89$	0.89$
50 - 99	0.87$	0.87$
100 - 100	0.85$	0.85$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 100

Set of 1

N-channel transistor, 26A, 32A, 10uA, 17m Ohms, SO, SO-8, 12V - SI4448DY-T1-E3. N-channel transistor, 26A, 32A, 10uA, 17m Ohms, SO, SO-8, 12V. ID (T=100°C): 26A. ID (T=25°C): 32A. Idss (max): 10uA. On-resistance Rds On: 17m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 12V. C(in): 12350pF. Cost): 2775pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 84 ns. Type of transistor: MOSFET. Function: Power MOSFET. Id(imp): 70A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 7.8W. Assembly/installation: surface-mounted component (SMD). Td(off): 240 ns. Td(on): 38 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Quantity per case: 1. Spec info: Id--40...50A t=10s with FR4 board. G-S Protection: no. Quantity in stock updated on 19/04/2025, 18:25.

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