N-channel transistor RFD3055LESM, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V. ID (T=25°C): 12A. Idss: 1uA. Idss (max): 12A. On-resistance Rds On: 0.15 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 850pF. Channel type: N. Cost): 170pF. Drain-source protection: diode. Function: logic level control, ESD protection. G-S Protection: diode. Marking on the case: F3055L. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. RoHS: yes. Td(off): 25 ns. Td(on): 10 ns. Technology: 'Enhancement-Mode Power MOSFET'. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Original product from manufacturer: Harris. Quantity in stock updated on 10/31/2025, 09:29