N-channel transistor IRFR024N, D-PAK ( TO-252 ), 12A, 17A, 250uA, 0.075 Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V

N-channel transistor IRFR024N, D-PAK ( TO-252 ), 12A, 17A, 250uA, 0.075 Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V

Quantity
Unit price
1-4
0.92$
5-24
0.79$
25-49
0.69$
50-99
0.64$
100+
0.56$
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Equivalence available
Quantity in stock: 157

N-channel transistor IRFR024N, D-PAK ( TO-252 ), 12A, 17A, 250uA, 0.075 Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V. Housing: D-PAK ( TO-252 ). ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 370pF. Channel type: N. Charge: 13.3nC. Cost): 140pF. Drain current: 16A. Drain-source protection: zener diode. Drain-source voltage: 55V. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 3.3K/W. IDss (min): 25uA. Id(imp): 68A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 45W. Polarity: unipolar. Power: 38W. Quantity per case: 1. RoHS: yes. Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFR024N
36 parameters
Housing
D-PAK ( TO-252 )
ID (T=100°C)
12A
ID (T=25°C)
17A
Idss (max)
250uA
On-resistance Rds On
0.075 Ohms
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
370pF
Channel type
N
Charge
13.3nC
Cost)
140pF
Drain current
16A
Drain-source protection
zener diode
Drain-source voltage
55V
G-S Protection
no
Gate-source voltage
20V, ±20V
Gate/source voltage Vgs
20V
Housing thermal resistance
3.3K/W
IDss (min)
25uA
Id(imp)
68A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
45W
Polarity
unipolar
Power
38W
Quantity per case
1
RoHS
yes
Td(off)
19 ns
Td(on)
4.9 ns
Technology
HEXFET® Power MOSFET
Trr Diode (Min.)
56 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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