N-channel transistor, 21A, 30A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 55V - IRLZ34N

Quantity	excl. VAT	VAT incl.
1 - 4	1.17$	1.17$
5 - 9	1.11$	1.11$
10 - 24	1.05$	1.05$
25 - 49	0.99$	0.99$
50 - 99	0.97$	0.97$
100 - 249	0.87$	0.87$
250 - 977	0.83$	0.83$

Quantity	U.P
1 - 4	1.17$	1.17$
5 - 9	1.11$	1.11$
10 - 24	1.05$	1.05$
25 - 49	0.99$	0.99$
50 - 99	0.97$	0.97$
100 - 249	0.87$	0.87$
250 - 977	0.83$	0.83$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 977

Set of 1

N-channel transistor, 21A, 30A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 55V - IRLZ34N. N-channel transistor, 21A, 30A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 880pF. Cost): 220pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 01:25.

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