Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.17$ | 1.17$ |
5 - 9 | 1.11$ | 1.11$ |
10 - 24 | 1.05$ | 1.05$ |
25 - 49 | 0.99$ | 0.99$ |
50 - 99 | 0.97$ | 0.97$ |
100 - 201 | 0.88$ | 0.88$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.17$ | 1.17$ |
5 - 9 | 1.11$ | 1.11$ |
10 - 24 | 1.05$ | 1.05$ |
25 - 49 | 0.99$ | 0.99$ |
50 - 99 | 0.97$ | 0.97$ |
100 - 201 | 0.88$ | 0.88$ |
N-channel transistor, 8.5A, 17A, 250uA, 0.075 Ohms, TO-220, TO-220AB, 55V - IRLZ24N. N-channel transistor, 8.5A, 17A, 250uA, 0.075 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 8.5A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 480pF. Cost): 130pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: Gate control by logic level. IDss (min): 25uA. Pd (Power Dissipation, Max): 47W. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 01:25.
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