N-channel transistor, 30A, 42A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRLR2905

Quantity	excl. VAT	VAT incl.
1 - 4	1.29$	1.29$
5 - 9	1.23$	1.23$
10 - 24	1.16$	1.16$
25 - 49	1.10$	1.10$
50 - 99	1.07$	1.07$
100 - 249	1.05$	1.05$
250 - 731	0.91$	0.91$

Quantity	U.P
1 - 4	1.29$	1.29$
5 - 9	1.23$	1.23$
10 - 24	1.16$	1.16$
25 - 49	1.10$	1.10$
50 - 99	1.07$	1.07$
100 - 249	1.05$	1.05$
250 - 731	0.91$	0.91$

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Quantity in stock : 731

Set of 1

N-channel transistor, 30A, 42A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRLR2905. N-channel transistor, 30A, 42A, 250uA, 0.027 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 1700pF. Cost): 400pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 160A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.

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