Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 45 | 0.35$ | 0.35$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.39$ | 0.39$ |
10 - 24 | 0.37$ | 0.37$ |
25 - 45 | 0.35$ | 0.35$ |
N-channel transistor, 0.93A, 1.2A, 25uA, 0.025 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 30 v - IRLML2803. N-channel transistor, 0.93A, 1.2A, 25uA, 0.025 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 30 v. ID (T=100°C): 0.93A. ID (T=25°C): 1.2A. Idss (max): 25uA. On-resistance Rds On: 0.025 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 30 v. C(in): 85pF. Cost): 34pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 7.3A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 540mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 9 ns. Td(on): 3.9 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.
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