N-channel transistor, 1.2A, 1.7A, 0.025mA, 1.7A, 0.20 Ohms, DIP, HVMDIP ( DIP-4 ), 60V - IRLD014

Quantity	excl. VAT	VAT incl.
1 - 4	1.32$	1.32$
5 - 9	1.25$	1.25$
10 - 24	1.21$	1.21$
25 - 49	1.19$	1.19$
50 - 94	1.04$	1.04$

Quantity	U.P
1 - 4	1.32$	1.32$
5 - 9	1.25$	1.25$
10 - 24	1.21$	1.21$
25 - 49	1.19$	1.19$
50 - 94	1.04$	1.04$

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Quantity in stock : 94

Set of 1

N-channel transistor, 1.2A, 1.7A, 0.025mA, 1.7A, 0.20 Ohms, DIP, HVMDIP ( DIP-4 ), 60V - IRLD014. N-channel transistor, 1.2A, 1.7A, 0.025mA, 1.7A, 0.20 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 1.7A. On-resistance Rds On: 0.20 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: td(on) 9.3ns, td(off) 17ns, Logic-Level Gate. Id(imp): 14A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Original product from manufacturer International Rectifier. Quantity in stock updated on 08/06/2025, 17:25.

Technical documentation

N-channel transistor, 1.2A, 1.7A, 0.025mA, 1.7A, 0.20 Ohms, DIP, HVMDIP ( DIP-4 ), 60V - IRLD014

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