N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH50K

Quantity	excl. VAT	VAT incl.
1 - 1	8.99$	8.99$
2 - 2	8.54$	8.54$
3 - 4	8.09$	8.09$
5 - 9	7.64$	7.64$
10 - 19	7.46$	7.46$
20 - 29	7.28$	7.28$
30 - 32	7.01$	7.01$

Quantity	U.P
1 - 1	8.99$	8.99$
2 - 2	8.54$	8.54$
3 - 4	8.09$	8.09$
5 - 9	7.64$	7.64$
10 - 19	7.46$	7.46$
20 - 29	7.28$	7.28$
30 - 32	7.01$	7.01$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 32

Set of 1

N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH50K. N-channel transistor, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 2800pF. Cost): 140pF. Channel type: N. Collector current: 45A. Ic(pulse): 90A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. CE diode: no. Germanium diode: no. Quantity in stock updated on 20/04/2025, 11:25.

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