N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U

Quantity	excl. VAT	VAT incl.
1 - 1	6.80$	6.80$
2 - 2	6.46$	6.46$
3 - 4	6.26$	6.26$
5 - 9	6.12$	6.12$
10 - 19	5.99$	5.99$
20 - 29	5.78$	5.78$
30 - 35	5.58$	5.58$

Quantity	U.P
1 - 1	6.80$	6.80$
2 - 2	6.46$	6.46$
3 - 4	6.26$	6.26$
5 - 9	6.12$	6.12$
10 - 19	5.99$	5.99$
20 - 29	5.78$	5.78$
30 - 35	5.58$	5.58$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 35

Set of 1

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U. N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 21A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. C(in): 1800pF. Cost): 120pF. CE diode: no. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Germanium diode: no. Collector current: 41A. Ic(pulse): 82A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer International Rectifier. Quantity in stock updated on 08/06/2025, 20:25.

Technical documentation

N-channel transistor, 21A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V - IRG4PH40U

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