N-channel transistor IRFS630A, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 500pF. Channel type: N. Cost): 95pF. Drain-source protection: diode. Function: Advanced Power MOSFET. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 36A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 38W. Quantity per case: 1. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:37