N-channel transistor IRFI630G, 4.1A, 6.5A, 250uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 800pF. Channel type: N. Cost): 240pF. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 36A. Marking on the case: IRFI630G. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 9.4 ns. Technology: Power MOSFET. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:37