Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.07$ | 1.07$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 49 | 0.95$ | 0.95$ |
50 - 99 | 0.93$ | 0.93$ |
100 - 107 | 0.82$ | 0.82$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.07$ | 1.07$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 49 | 0.95$ | 0.95$ |
50 - 99 | 0.93$ | 0.93$ |
100 - 107 | 0.82$ | 0.82$ |
N-channel transistor, 12A, 16A, 250uA, 0.115 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V - IRFR3910. N-channel transistor, 12A, 16A, 250uA, 0.115 Ohms, D-PAK ( TO-252 ), D-PAK TO-252AA, 100V. ID (T=100°C): 12A. ID (T=25°C): 16A. Idss (max): 250uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. C(in): 640pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60A. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 37 ns. Td(on): 6.4 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 06/05/2025, 14:25.
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