N-channel transistor, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRFR3709Z

N-channel transistor, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v - IRFR3709Z. N-channel transistor, 61A, 86A, 150uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 5.2m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 2330pF. Cost): 460pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, Ultra-Low Gate Impedance. G-S Protection: no. Id(imp): 340A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity in stock updated on 06/05/2025, 16:25.