Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.64$ | 5.64$ |
5 - 9 | 5.35$ | 5.35$ |
10 - 24 | 5.07$ | 5.07$ |
25 - 49 | 4.79$ | 4.79$ |
50 - 63 | 4.68$ | 4.68$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.64$ | 5.64$ |
5 - 9 | 5.35$ | 5.35$ |
10 - 24 | 5.07$ | 5.07$ |
25 - 49 | 4.79$ | 4.79$ |
50 - 63 | 4.68$ | 4.68$ |
N-channel transistor, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V - IRFPF50. N-channel transistor, 4.2A, 6.7A, 500uA, 1.6 Ohms, TO-247, TO-247AC, 900V. ID (T=100°C): 4.2A. ID (T=25°C): 6.7A. Idss (max): 500uA. On-resistance Rds On: 1.6 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V. C(in): 2900pF. Cost): 270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 27A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 06/05/2025, 14:25.
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