N-channel transistor IRFP460APBF, TO-247, 500V, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V

N-channel transistor IRFP460APBF, TO-247, 500V, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V

Quantity
Unit price
1-4
4.69$
5-24
4.21$
25-49
3.77$
50-99
3.49$
100+
3.07$
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Quantity in stock: 42

N-channel transistor IRFP460APBF, TO-247, 500V, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V. Housing: TO-247. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 3100pF. Channel type: N. Ciss Gate Capacitance [pF]: 3100pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 480pF. Drain current Id (A) @ 25°C: 20A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 12A. Drain-source protection: yes. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 80A. Manufacturer's marking: IRFP460APBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 280W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 280W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 18 ns. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFP460APBF
43 parameters
Housing
TO-247
Drain-source voltage Uds [V]
500V
ID (T=100°C)
13A
ID (T=25°C)
20A
Idss (max)
250uA
On-resistance Rds On
0.27 Ohms
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
3100pF
Channel type
N
Ciss Gate Capacitance [pF]
3100pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Cost)
480pF
Drain current Id (A) @ 25°C
20A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.27 Ohms @ 12A
Drain-source protection
yes
Function
Switching Mode Power Supplies (SMPS)
G-S Protection
no
Gate breakdown voltage Ugs [V]
4 v
Gate/source voltage Vgs
30 v
IDss (min)
25uA
Id(imp)
80A
Manufacturer's marking
IRFP460APBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
280W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
280W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
45 ns
Switch-on time ton [nsec.]
18 ns
Td(off)
45 ns
Td(on)
18 ns
Technology
HEXFET Power MOSFET, High Efficiency Synchronous R
Trr Diode (Min.)
480 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Vishay

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