N-channel transistor 2SK1170, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V

N-channel transistor 2SK1170, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V

Quantity
Unit price
1-4
11.14$
5-9
10.32$
10-24
9.32$
25+
9.04$
Obsolete product, soon to be removed from the catalog
Out of stock
Equivalence available

N-channel transistor 2SK1170, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 2800pF. Channel type: N. Cost): 780pF. Drain-source protection: diode. Function: N MOSFET transistor. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 80A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. Spec info: High speed switching Low drive current. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Original product from manufacturer: Hitachi. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK1170
26 parameters
ID (T=25°C)
20A
Idss (max)
250uA
On-resistance Rds On
0.27 Ohms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
2800pF
Channel type
N
Cost)
780pF
Drain-source protection
diode
Function
N MOSFET transistor
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
80A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
120W
Quantity per case
1
Spec info
High speed switching Low drive current
Td(off)
200 ns
Td(on)
32 ns
Technology
V-MOS
Trr Diode (Min.)
500 ns
Type of transistor
MOSFET
Original product from manufacturer
Hitachi

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