N-channel transistor IRFP460, TO-247, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V

N-channel transistor IRFP460, TO-247, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V

Quantity
Unit price
1-4
6.00$
5-24
5.46$
25-49
5.01$
50-99
4.71$
100+
4.25$
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Equivalence available
Quantity in stock: 96

N-channel transistor IRFP460, TO-247, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V. Housing: TO-247. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 4200pF. Channel type: N. Charge: 210nC. Conditioning: tubus. Cost): 870pF. Drain current: 20A, 13A. Drain-source protection: yes. Drain-source voltage: 500V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 80A. Manufacturer's marking: IRFP460PBF. Number of terminals: 3. On-state resistance: 0.27 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 280W. Polarity: unipolar. Power: 280W. Quantity per case: 1. RoHS: yes. Td(off): 110 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFP460
39 parameters
Housing
TO-247
ID (T=100°C)
13A
ID (T=25°C)
20A
Idss (max)
250uA
On-resistance Rds On
0.27 Ohms
Housing (according to data sheet)
TO-247AC
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
4200pF
Channel type
N
Charge
210nC
Conditioning
tubus
Cost)
870pF
Drain current
20A, 13A
Drain-source protection
yes
Drain-source voltage
500V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
80A
Manufacturer's marking
IRFP460PBF
Number of terminals
3
On-state resistance
0.27 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
280W
Polarity
unipolar
Power
280W
Quantity per case
1
RoHS
yes
Td(off)
110 ns
Td(on)
18 ns
Technology
HEXFET Power MOSFET, High Efficiency Synchronous R
Trr Diode (Min.)
570 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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