Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.50$ | 4.50$ |
5 - 9 | 4.28$ | 4.28$ |
10 - 24 | 4.05$ | 4.05$ |
25 - 49 | 3.83$ | 3.83$ |
50 - 99 | 3.56$ | 3.56$ |
100 - 149 | 3.35$ | 3.35$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.50$ | 4.50$ |
5 - 9 | 4.28$ | 4.28$ |
10 - 24 | 4.05$ | 4.05$ |
25 - 49 | 3.83$ | 3.83$ |
50 - 99 | 3.56$ | 3.56$ |
100 - 149 | 3.35$ | 3.35$ |
N-channel transistor, 59A, 110A, 250uA, 0.008 Ohms, TO-247, TO-247AC, 55V - IRFP064N. N-channel transistor, 59A, 110A, 250uA, 0.008 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 59A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 4000pF. Cost): 1300pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 390A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Ultra Low On-Resistance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.
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